| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can increase a reliability by preventing degradation of characteristics of the semiconductor device, and suppressing invasion of moisture into the semiconductor device, and also to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device comprises a semiconductor element formed on a compound semiconductor substrate, an insulating protective film selectively formed on the substrate to cover the semiconductor element, and a metallic film for covering the peripheral edge of the protective film. COPYRIGHT: (C)2007,JPO&INPIT
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