METHOD AND SYSTEM FOR LINE-DIMENSION CONTROL OF AN ETCH PROCESS

摘要

A method and system for controlling a dimension of an etched feature (150). The method includes: measuring a mask feature (145) formed on a top surface of a layer (110) on a substrate (100) to obtain a mask feature dimension value; and calculating (265) a mask trim plasma etch time based on the mask feature dimension value, a mask feature dimension target value (255), a total of selected radio frequency power-on times of a plasma etch tool (180) since an event occurring to a chamber or chambers of a plasma etch tool for plasma etching the layer, and an etch bias target for a layer feature to be formed from the layer where the layer is not protected by the mask feature during a plasma etch (275) of the layer.