发明名称 Manufacturing method for light coupling device, involves placing waveguide layer on substrate so that orientation of main etching rate of inclination of wedge angle relates perpendicular to substrate surface
摘要 <p>The method involves applying a mono-crystalline waveguide layer on a substrate and deformed by a lithography method for the adapter. The waveguide layer is placed on the substrate so that the orientation of the main etching rate of the inclination of the wedge angle relates perpendicular to the substrate surface. The waveguide layer is formed at the manifold with an etching removal in the orientation of the main etching rate. The waveguide layer has a crystal faces of single-crystal silicon.</p>
申请公布号 DE102007002191(A1) 申请公布日期 2007.08.23
申请号 DE20071002191 申请日期 2007.01.16
申请人 PHOTEON TECHNOLOGIES GMBH 发明人 HINGERL, KURT;MERZ, ROBERT;HUDEK, PETER;SEYRINGER, HEINZ
分类号 G02B6/30 主分类号 G02B6/30
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