发明名称 |
DOUBLE-GATE SEMICONDUCTOR DEVICES HAVING GATES WITH DIFFERENT WORK FUNCTIONS AND METHODS OF MANUFACTURE THEREOF |
摘要 |
<p>A double-gate FinFET and methods for its manufacture are provided. The FinFET includes first and second gates (72, 74) adjacent respective sides of the fin (20), with at least a portion of the first gate facing the fin being formed of polycrystalline silicon, and at least a portion of the second gate facing the fin being formed of a metal suicide compound. The different compositions of the two gates provide different respective work functions to reduce short channel effects.</p> |
申请公布号 |
WO2007093930(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
WO2007IB50357 |
申请日期 |
2007.02.02 |
申请人 |
NXP B.V.;VAN DAL, MARK;SURDEANU, RADU |
发明人 |
VAN DAL, MARK;SURDEANU, RADU |
分类号 |
H01L29/786;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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