| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a CMISFET (complimentary insulated gate field effect transistor) semiconductor device which can give a work function difference between the gate electrodes in gate electrodes of two conductive regions. SOLUTION: An element isolation region, a first conductive region, and a second conductive region are formed on the main surface of a board, and an insulating film is formed on the entire surface of the board. Each semiconductor element structure including a gate electrode formation preparation region is formed above each conductive region via the insulating film. Then, a gate electrode trench, in which the insulating film is eliminated under the semiconductor element structure, is formed in the gate electrode formation preparation region of each semiconductor element structure, and a gate insulating film 115 and a metal gate electrode material film 116 are deposited on the bottom and side of the gate electrode trench. Subsequently, the metal gate electrode material film 116 formed in the gate insulating trench in the first conductive region is alloyed into an alloy 120. Thus, gate electrodes 122 and 123 are formed in respective conductive regions. COPYRIGHT: (C)2007,JPO&INPIT
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