| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having openings properly formed thereon, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor device includes a first interlayer insulating layer 20 provided on the upper part of a semiconductor layer 10; a fuse 22 provided on the upper part of the first interlayer insulating layer; a second interlayer insulating layer 30 provided on the upper part of the fuse; an electrode pad 32 provided on a part above the second interlayer insulating layer, other than the upper part of the fuse, and having at least a metal layer 32b and a metal nitride layer 32c laminated thereon; a passivation layer 40 provided on the upper part of the electrode pad and the second interlayer insulating layer; a first opening 50 provided on the passivation layer and exposing at least one part of the metal layer of the electrode pad; and a second opening 60 provided on the upper part of the fuse, piercing the passivation layer and having a bottom surface formed by one part of the second interlayer insulating layer. The second opening has a planar shape that is smaller than that of the first opening, and the width of the second opening is in the range of 2-6μm. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
