| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exhaust gas purification catalyst comprising a uniformly formed catalyst-support layer even if a substrate of support having communication holes is comprised of silicon carbide or silicon nitride and as a result having a reduced pressure drop and a high purification capacity, and a method for preparing the catalyst. <P>SOLUTION: The exhaust gas purification catalyst according to the present invention is characterized by comprising a substrate of support having a plurality of cells penetrating therethrough in a specified direction formed by partition walls comprised of a silicon containing ceramic and having communication holes, a precoat layer comprised of an inorganic oxide uniformly formed on the surface of the partition walls, a catalyst-support layer formed on the precoat layer, and at least a catalyst component supported by the catalyst-support layer. The precoat layer is prepared by coating the partition walls with slurry mainly comprised of an inorganic oxide sol. Since the catalyst-support layer is uniformly formed on the precoat layer which is uniformly formed on the substrate of support, a low pressure drop and high purification capacity of the catalyst are materialized without greatly decreasing the porosity of the substrate of support. <P>COPYRIGHT: (C)2007,JPO&INPIT |
