发明名称 Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former
摘要 A substrate inspection apparatus 1 - 1 (FIG. 1 ) of the present invention performs the following steps of: carrying a substrate "S" to be inspected into an inspection chamber 23 - 1 ; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26 - 1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10 - 1 ; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20 - 1 and guiding it to a detecting system 35 - 1 ; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37 - 1 ; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.
申请公布号 US2007194235(A1) 申请公布日期 2007.08.23
申请号 US20070783780 申请日期 2007.04.12
申请人 EBARA CORPORATION 发明人 KIMBA TOSHIFUMI;SATAKE TOHRU;KARIMATA TSUTOMU;WATANABE KENJI;NOJI NOBUHARU;MURAKAMI TAKESHI;HATAKEYAMA MASAHIRO;NAKASUJI MAMORU;SOBUKAWA HIROSI;YOSHIKAWA SHOJI;OOWADA SHIN;SAITO MUTSUMI
分类号 G01N23/00;G01N23/225;G01Q30/02;H01J37/06;H01J37/073;H01J37/18;H01J37/20;H01J37/22;H01J37/244;H01J37/28 主分类号 G01N23/00
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