| 摘要 |
The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage Vw of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage Vesc applied to an electrostatic chuck mechanism 200 and a bias current Iesc flowing through the electrostatic chuck mechanism 200 , a capacity component Cesc which is an impedance representing the electric property of the electrostatic chuck mechanism 200 is computed numerically. Then, based on a predetermined expression, the voltage Vw of the processing substrate 102 is estimated using the bias voltage Vesc of the processing substrate 102 to be measured, the bias current Iesc flowing through the electrostatic chuck mechanism 200 and the capacity component Cesc which is the impedance acquired in advance.
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