发明名称 Method of varying etch selectivities of a film
摘要 A method of patterning a crystalline film. A crystalline film having a degenerate lattice comprising first atoms in a first region and a second region is provided. Dopants are substituted for said first atoms in said first region to form a non-degenerate crystalline film in said first region. The first region and the second region are exposed to a wet etchant wherein the wet etchant etches the degenerate lattice in said second region without etching the non-degenerate lattice in the first region.
申请公布号 US2007197042(A1) 申请公布日期 2007.08.23
申请号 US20070788799 申请日期 2007.04.19
申请人 BRASK JUSTIN K 发明人 BRASK JUSTIN K.
分类号 H01L21/302;H01L21/265;H01L21/28;H01L21/306;H01L21/311;H01L21/3213;H01L21/336;H01L21/461;H01L21/8238;H01L29/49;H01L29/51;H01L29/78 主分类号 H01L21/302
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