发明名称 |
Method of varying etch selectivities of a film |
摘要 |
A method of patterning a crystalline film. A crystalline film having a degenerate lattice comprising first atoms in a first region and a second region is provided. Dopants are substituted for said first atoms in said first region to form a non-degenerate crystalline film in said first region. The first region and the second region are exposed to a wet etchant wherein the wet etchant etches the degenerate lattice in said second region without etching the non-degenerate lattice in the first region.
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申请公布号 |
US2007197042(A1) |
申请公布日期 |
2007.08.23 |
申请号 |
US20070788799 |
申请日期 |
2007.04.19 |
申请人 |
BRASK JUSTIN K |
发明人 |
BRASK JUSTIN K. |
分类号 |
H01L21/302;H01L21/265;H01L21/28;H01L21/306;H01L21/311;H01L21/3213;H01L21/336;H01L21/461;H01L21/8238;H01L29/49;H01L29/51;H01L29/78 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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