发明名称 Semiconductor laser diode having ridge
摘要 A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
申请公布号 US2007195851(A1) 申请公布日期 2007.08.23
申请号 US20070657672 申请日期 2007.01.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHAE JUNG-HYE;SHIM JONG-IN;HA KYOUNG-HO;KIM KYU-SANG;RYU HAN-YOUL
分类号 H01S3/00;H01S3/097;H01S5/00 主分类号 H01S3/00
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