| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a high emission intensity by forming a substrate mainly of GaP and forming an active layer mainly of InGaAlP. <P>SOLUTION: A manufacturing method of the semiconductor light emitting element comprises processes of: epitaxially growing an alloy In<SB>x</SB>(Ga<SB>1-y</SB>Al<SB>y</SB>)<SB>1-x</SB>P compound semiconductor on a GaAs substrate 12 to fabricate an epitaxial wafer having an n-type clad layer 14 (0.45<x<0.50, 0≤y≤1), active layer 15, p-type clad layer 16, and cover layer 17; removing the cover layer 17 by etching to expose the surface of the p-type clad layer 16; placing a mirror-finished GaP substrate 11 on the p-type clad layer 16 in such a manner that the mirror-finished face may be in contact with the p-type clad layer 16, and integrally joining it to the p-type clad layer 16 at room temperature; conducting a heat treatment; carrying out etching from the GaAs substrate 12 side to expose the n-type clad layer 14; and forming electrodes 19 on the front face of the n-type clad layer 14 and on the rear face of the GaP substrate 11, respectively. <P>COPYRIGHT: (C)2007,JPO&INPIT |
