| 摘要 |
PROBLEM TO BE SOLVED: To provide a method with which an annealing process can be performed without causing a phenomenon in which a Cu seeding film is flipped to cause a diffusion-barrier base film thereunder to be exposed on a semiconductor substrate surface, such as at upper corners (close to openings) of holes or trench patterns on the substrate, even if an annealing process which is effective in improving the adhesion of Cu seeding film is conducted in a method of forming a copper wiring film, wherein the method of forming the copper wiring film comprises steps of forming the diffusion-barrier base film on an insulating film which is formed on the semiconductor substrate and which has recesses, forming a first copper film thereon, and forming a second copper film by an electroplating using the first copper film as an electrode, and to provide the wiring film thereby. SOLUTION: The process steps from forming the diffusion-barrier base film to forming the first copper film are performed continuously in vacuum without exposing the semiconductor substrate to the atmospheric air, and during the process steps, the diffusion barrier base film is heated after the vacuum condition is reached to a vacuum level of 1×10<SP>-4</SP>Pa or lower. COPYRIGHT: (C)2007,JPO&INPIT
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