ION IMPLANTING APPARATUS

摘要

Provided is a small ion implanting apparatus for manufacturing single crystalline films, with stable parallelism of ion beams and high controllability of density distribution. The ion implanting apparatus extracts hydrogen ions or rare gas ions from an ion source (12), desired ions (B) are selected from a first fan-shaped electromagnet (14), the ions (B) are scanned by a scanner (16), the ions (B) are parallelized by a second fan-shaped electromagnet (18) and implanted into a substrate (20), and a single crystalline film is manufactured. The ion source (12) is arranged in the vicinity of an inlet side focal point (F1) of the first fan-shaped electromagnet (14). When the opening of the extracting section of the ion source (12) is made circular and that a deflection plane in the first fan-shaped electromagnet (14) matches with the inlet side focal point on a plane vertical to the deflection plane, the spot shape of the ion beam (B) after passing through the first fan-shaped electromagnet (14) becomes circular and completely parallel on the two planes.