| 摘要 |
A method for fabricating a semiconductor device is provided to improve reliability such as stress migration or electromigration by sufficiently lowering the resistance of a via hole and decreasing resistance variation. A refractory metal layer is stacked on a metal layer for an interconnection including a first barrier metal. An ARC(anti-reflective coating) is deposited on the refractory metal layer. The interconnection is formed which is composed of the metal layer with the first barrier metal, the refractory metal layer and the ARC. An interlayer dielectric is formed on the interconnection. A connection hole to the ARC as the uppermost layer of the interconnection is formed on the interlayer dielectric. The ARC on the bottom of the connection hole is selectively removed. A metal layer for a second interconnection is deposited through the connection hole. The first and the second interconnection metal layers can be made of aluminum or aluminum alloy.
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