FABRICATING METHOD OF GATE HAVING PROTECTING SPACER

摘要

A method for fabricating a gate having a protection spacer is provided to form a protection spacer capable of maintaining a stable gate stack structure by preventing oxidation of a material layer constituting a gate. A gate insulation layer is formed on a semiconductor substrate(100). A gate pattern(125) is formed on the gate insulation layer. A protection spacer is formed on the sidewall of the gate pattern. A thermal oxidation process is performed on the substrate having the protection spacer. A polysilicon pattern(110), a metal silicide pattern(115) and a capping pattern(120) can be sequentially stacked in the gate pattern.