发明名称 |
SINGLE CRYSTAL SUBSTRATE AND FABRICATION METHOD THEREOF |
摘要 |
A single crystal substrate and a manufacturing method thereof are provided to reduce fabrication costs by acquiring an aiming thickness from the single crystal substrate and a single crystal germanium substrate at low costs. A single crystal substrate includes a crystalline substrate(1), a laterally crystallized crystalline layer, and a polishing stopper. The laterally crystallized crystalline layer is formed parallel with the crystalline substrate. The polishing stopper(4) is buried in the laterally crystallized crystalline layer in order to restrict a polishing depth of the laterally crystallized crystalline layer. An insulating layer is interposed between the crystalline substrate and the laterally crystallized crystalline layer in order to induce the lateral growth of the laterally crystallized crystalline layer. The insulating layer includes a window for exposing partially the crystalline substrate.
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申请公布号 |
KR20070082381(A) |
申请公布日期 |
2007.08.21 |
申请号 |
KR20060015151 |
申请日期 |
2006.02.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
TAKASHI NOGUCHI;CHOHANS, SE YOUNG;WENXU XIANYU;HUAXIANG YIN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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