MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to increase the driving current of a transistor by laminating a contact stop layer having tensile stress characteristic on the entire surface of a substrate including a gate electrode. A gate dielectric(202) and a gate electrode(203) are sequentially formed on a semiconductor substrate(200). An LDD(Lightly Doped Drain) region(204) is formed on a surface of an active region at both sides of the gate electrode. A spacer of an NON(Oxide-Nitride-Oxide) structure is formed on both sidewalls of the gate electrode. A source/drain region(209) is formed on the substrate's surface at both sides of the gate electrode including the spacer. A silicide(210) is formed on the upper portion of the gate electrode and on the upper portion of the source/drain region. An oxide layer(205) on the top of the spacer of the ONO structure is removed. A contact stop layer(211) is formed on the entire surface of the substrate including the gate electrode.