A METHOD FOR FABRICATING WIRING LINE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a metal line of a semiconductor device is provided to prevent the generation of scratches by removing a diffusion barrier and a copper seed layer using an etch process instead of a conventional touch up process. At least one type insulating layer is formed on the entire surface of a semiconductor substrate(1). A hole is formed on the insulating layer in order to expose partially the semiconductor substrate to the outside. A diffusion barrier layer(10) is formed on the insulating layer including the hole. A seed layer(11) is formed on the diffusion barrier layer. A photoresist pattern(13) is formed on the seed layer in order to expose a predetermined portion except the hole to the outside. The seed layer and the diffusion barrier layer are selectively removed from the resultant structure by using the photoresist pattern as an etch mask.