| 摘要 |
A nitride based semiconductor light emitting device and its manufacturing method are provided to prevent damage of the device when a sapphire substrate is removed, by connecting an n-type electrode with an n-type nitride semiconductor layer. A portion of one side of a substrate is etched to form a pattern hole(111), and the pattern hole is filled with a given material. A light emitting structure having an n-type nitride semiconductor layer(120), an active layer(130), and a p-type nitride semiconductor layer(140) is formed on one side of the substrate. The other side of the substrate is removed to expose the pattern hole. An n-type electrode is formed on the other side of the substrate to ohmic contact the n-type electrode with the n-type nitride semiconductor layer.
|
