FABRICATION METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor substrate is provided to increase the reliability of contact resistance by removing various kinds of polymers remaining after a contact hole is formed. An interlayer dielectric(120) is formed on a semiconductor substrate, and then a photoresist pattern is formed on the interlayer dielectric. The interlayer dielectric is etched by using the photoresist pattern as an etch mask to form an opening(140), and then an ashing process is performed on the substrate to remove the photoresist pattern, in which the etching and ashing processes is performed at room temperature and in the same chamber.