| 摘要 |
A method for cleaning a substrate processing chamber, a storage medium and a substrate processing chamber are provided to prevent formation of an oxide layer on a surface of a component located in the processing chamber. An attached material is removed from a component in a processing chamber using plasma which is produced from oxygen gas introduced into a space(S63). An oxide is removed from the component in the processing chamber by using second plasma which is produced from carbon tetrafluoride gas introduced into the space(S66). The component is an electrode which is disposed facing the substrate transferred into the space, and is connected to a direct current power source.
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