MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent increase of contact resistance due to an alignment error by increasing an alignment error margin between plugs of a wire and the lower portion thereof using a conductive pad in the plug forming process. A semiconductor substrate(50) where a cell region and a peripheral region are divided is prepared. Plural junction regions(50d) are formed on the semiconductor substrate. A first interlayer dielectric(52) is formed on the semiconductor substrate. A first contact hole on the first junction region of the junction regions is formed by etching a predetermined region of the first interlayer dielectric. A first contact plug(53c) is formed in the first contact hole. A conductive pad whose area is greater than that of the first contact plug is formed on an upper portion of the first contact plug. A second interlayer dielectric(54) is formed on the whole structure including the conductive pad. Predetermined regions of the second and first interlayer dielectrics are etched to form a second contact hole on the upper portion of the second junction region of the junction regions and on the conductive pad. A second contact plug(57d) is formed on the second contact hole.