| 摘要 |
<p>A semiconductor device and its manufacturing method are provided to reduce a thermal damage to a gate electrode by forming a gate electrode after source and drain electrodes are formed. A semiconductor device includes a device isolation region(102), a p-type well(103), an n-type well(104), and a silicon oxide film, which are sequentially stacked on a semiconductor substrate(101). A dummy gate electrode is formed of polycrystalline silicon. A gate sidewall(107) is made of an insulation film, such as a silicon nitride film. An extension(108) of an n-type MISFET, a source/drain(109) of the n-type MISFET, an extension(110) of a p-type MISFET, a source/drain(111) of the p-type MISFET, a silicon nitride film(112), and an interlayer dielectric(113) are sequentially formed on a semiconductor substrate by using a polycrystalline silicon gate transistor forming technique. The interlayer dielectric is polished by a CMP, such that an upper surface of the silicon nitride film is exposed.</p> |
