| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device which can correct error by one kind of memory controller with respect to various kinds of flash memories having different reliability. <P>SOLUTION: The memory controller 104 includes a plurality of ECC circuits 105 and 106 having different error correcting ability, and an ECC table 107 where information to show the correspondence relationship between the kind of flash memories 103 and the plurality of ECC circuits is stored. The memory controller 104 selects the ECC circuit 105 or 106 corresponded to the kind of flash memories 103 by the ECC table 107, then (a) when data are written into the flash memory 103, the memory controller 104 uses the selected ECC circuit to add an ECC code to the data of unit size, and (b) when the data are read out from the flash memory 103, uses the selected ECC circuit to correct data error of the unit size to which the ECC code is added. <P>COPYRIGHT: (C)2007,JPO&INPIT |
