发明名称 SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing method with which film thickness uniformity within a substrate surface can be improved. SOLUTION: The substrate processing method for generating plasma by incurring magnetron discharge within a processing vessel by an electric field and a magnetic field, and for performing plasma processing on a substrate using the plasma includes the steps of: carrying the substrate into the processing vessel; forming a film on the substrate through activation using plasma by feeding gases into the processing vessel; and carrying the treated substrate out of the processing vessel. In the film forming step, the exhaustion of gases from the processing vessel is reduced so as not to affect film thickness uniformity of the film formed on the substrate. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007208169(A) 申请公布日期 2007.08.16
申请号 JP20060028042 申请日期 2006.02.06
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKAYAMA MASANORI
分类号 H01L21/318;H01L21/316 主分类号 H01L21/318
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