| 摘要 |
A method for fabricating a semiconductor device includes providing a semiconductor substrate comprising a patterned metal conductor layer. To provide UV blocking, an overlying separation layer is formed over the substrate, and a UV blocking layer of silicon enriched oxide is formed over the separation layer. The UV blocking layer has a silicon atomic concentration sufficient for ultraviolet blocking. A gap-filling, hydrogen-blocking layer may be formed over the semiconductor substrate, and any the UV blocking layer, to prevent hydrogen from passing therethrough.
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