| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability, adapted to suppress deterioration of barrier metal etc. caused by residual gas remaining in an insulating film, when an interlayer insulating layer, particularly a low-k film is used, to provide a method of fabricating the semiconductor device, and to provide a method of generating a pattern. SOLUTION: The semiconductor device 10 relating to an embodiment of the present invention has: wiring layers 11a to 11c formed on a semiconductor substrate, each including an interlayer insulating film 20, a protective film 21 formed on the interlayer insulating film 20, the protective film having a density higher than that of the interlayer insulating film 20, and at least one of a wiring 14 and a dummy wiring 15 formed in the interlayer insulating film 20 and the protective film 21; and separation walls (metal walls 16) formed in the interlayer insulating film 20 so as to surround a low density region 17 to separate the low density region from other regions, the low density region 17 having a sum of covering densities of the wiring 14 and the dummy wiring 15 lower than a given stipulated value. COPYRIGHT: (C)2007,JPO&INPIT
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