发明名称 |
Opto-thermal annealing mask and method |
摘要 |
An opto-thermal annealing mask stack layer includes a thermal dissipative layer located over a substrate. A reflective layer is located upon the thermal dissipative layer. A transparent capping layer, that may have a thickness from about 10 to about 100 angstroms, is located upon the reflective layer. The opto-thermal annealing mask layer may be used as a gate electrode within a field effect device.
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申请公布号 |
US2007187670(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20060355799 |
申请日期 |
2006.02.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;MANDELMAN JACK A.;NARAYAN CHANDRASEKHAR;SUNG CHUN-YUNG |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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