发明名称 Opto-thermal annealing mask and method
摘要 An opto-thermal annealing mask stack layer includes a thermal dissipative layer located over a substrate. A reflective layer is located upon the thermal dissipative layer. A transparent capping layer, that may have a thickness from about 10 to about 100 angstroms, is located upon the reflective layer. The opto-thermal annealing mask layer may be used as a gate electrode within a field effect device.
申请公布号 US2007187670(A1) 申请公布日期 2007.08.16
申请号 US20060355799 申请日期 2006.02.16
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 HSU LOUIS L.;MANDELMAN JACK A.;NARAYAN CHANDRASEKHAR;SUNG CHUN-YUNG
分类号 H01L29/06 主分类号 H01L29/06
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