| 摘要 |
A method for fabricating a semiconductor device with a recess gate is provided to improve a device characteristic by solving a misalignment problem between a recess pattern and a gate pattern. A sacrificial layer is formed on a semiconductor substrate(31). A photoresist layer is formed on the sacrificial layer. An exposure and development process is performed on the photoresist layer to form a photoresist layer pattern for opening a gate formation region. By using the photoresist layer pattern as an etch mask, the sacrificial layer is etched to form a sacrificial layer pattern. By using the sacrificial layer pattern as a hard mask, the semiconductor substrate is etched to form a recess(35). A gate insulation layer is formed on the surface of the recess. Spacers are formed on the gate insulation layer and on the sidewalls of the sacrificial layer pattern and the recess. A gate electrode material is formed on the sacrificial layer pattern to fill the recess. The gate electrode material is planarized until the surface of the surface of the sacrificial layer pattern is exposed. The sacrificial layer pattern and the spacer are selectively eliminated. A gate insulation layer(36a) is additionally grown to fill a gap between the gate electrode material and the sidewall of the recess that are generated after the sacrificial layer pattern and the spacer are removed.
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