| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas supply apparatus capable of obtaining a desired in-surface uniformity with simple pipe construction, and shortening time required for supplying the addition gas by a simple control. SOLUTION: Prior to processing of a wafer, a processing gas from a processing gas supply means 210 is distributed to a second branch pipes 204 and 206 at a first prescribed voltage dividing ratio, and subsequently a supply of the processing gas is started, with a flow rate of addition gas set at a first-out flow rate larger than previously set flow rate by an addition gas supply control, and the processing gas is supplied, with the flow rate of the addition gas set at a set flow rate after prescribed time is elapsed. COPYRIGHT: (C)2007,JPO&INPIT |
