| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus, wherein the yield is enhanced and a single crystal having desired characteristics can be obtained by regulating a gas flow flowing inside a furnace body even when the distance between the lower end of a radiation shield and a silicon melt is large. SOLUTION: The single crystal pulling apparatus comprises: a radiation shield 6 which is formed in such a manner that an upper part and a lower part are opened so as to surround the periphery of a single crystal C at an upper part of a crucible 3, and shields radiation heat to the single crystal C; a gas feeding means 13 for feeding an inert gas G from an upper part of the radiation shield 6 toward a lower part; and a flow regulation plate 7 which is provided in a space formed between the radiation shield 6 and the crucible 3 and divides a flow passage of the inert gas G fed into the crucible 3 by the gas feeding means 13 and led to the outside of the crucible 3 in the height direction. COPYRIGHT: (C)2007,JPO&INPIT
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