PROCESS FOR MANUFACTURING SINGLE ELECTRON SEMICONDUCTOR ELEMENT

摘要

This invention provides a process for manufacturing a single electron semiconductor element (SET), characterized in that a solution containing ferritin, containing metal or semiconductor particles, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by stacking a titanium film and a film of a metal other than titanium, to selectively dispose the ferritin in a nanogap between the source electrode and the drain electrode. In the manufacturing process, after the decomposition of the ferritin, the metal or semiconductor particles can be fixed as quantum dots at proper positions in the nanogap between the source electrode and the drain electrode, and, at the same time, the formation of unnecessary quantum dots can also be suppressed.