TFT AND METHOD OF FABRICATING THE SAME AND DISPLAY APPARATUS HAVING THE SAME

摘要

A TFT, its manufacturing method, and a display device having the TFT are provided to prevent a source electrode from being short-circuited to a drain electrode by increasing a channel width in the TFT. A TFT includes a substrate(1), a gate electrode(10), a semiconductor pattern(30), a source electrode(40), and a drain electrode(50). The substrate further includes a first region and a second region enclosing the first region. The gate electrode is formed on the first and the second regions. The semiconductor pattern is formed on the first region on the gate electrode. The source electrode is formed on the semiconductor pattern and includes first through third electrode. The third electrode couples end portions of the first and the second electrodes outside the second region. The drain electrode is formed between the first and the second electrodes on the semiconductor pattern. The first and the second electrodes are arranged to be near to the drain electrode in the first and the second regions, respectively.