发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a high performance, reliable semiconductor device capable of suppressing wiring layer peel-off due to resin film removal from a land, and preventing electrical disconnection and an effective method for fabrication thereof. <P>SOLUTION: This semiconductor device comprises a semiconductor substrate (for example, silicon wafer 10), an insulating film 12 formed on the semiconductor substrate 10, a wiring part 22, and a land 24 for connecting the wiring part 22 and an external terminal 40. In addition, it has at least a conductive layer 20 formed on the insulating film 12, and a resin film 30 covering the conductive layer 20 in a way that the resin film 30 contacts the insulating film 12 at least at a part within the land 24, passing through the conductive layer 20. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007208209(A) 申请公布日期 2007.08.16
申请号 JP20060028850 申请日期 2006.02.06
申请人 FUJITSU LTD 发明人 AIBA YOSHITAKA
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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