| 发明名称 |
Manganese Doped Magnetic Semiconductors |
| 摘要 |
A semi-conducting material being a non-oxide material or an already doped oxide material, wherein said material is doped with Manganese, Mn, and is ferromagnetic at least at one temperature in the range between room temperature and 500 K. Preferably, the Manganese doped material has a Manganese concentration at or below 5 at %.
|
| 申请公布号 |
US2007190367(A1) |
申请公布日期 |
2007.08.16 |
| 申请号 |
US20050596342 |
申请日期 |
2005.05.17 |
| 申请人 |
RAO VENKAT;SHARMA PARMANAND;GUPTA AMITA |
发明人 |
RAO VENKAT;SHARMA PARMANAND;GUPTA AMITA |
| 分类号 |
G11B5/708;H01F1/40;H01F10/193;H01L;H01L21/24;H01L21/324;H01L29/227;H01L29/66;H01L41/18;H01L43/10 |
主分类号 |
G11B5/708 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
