Omni-band amplifiers

摘要

Omni-band amplifiers support multiple band groups. In an exemplary design, an apparatus (e.g., a wireless device, an integrated circuit, etc.) includes at least one gain transistor and a plurality of cascode transistors for a plurality of band groups. Each band group covers a plurality of bands. The gain transistor(s) receive an input radio frequency (RF) signal. The cascode transistors are coupled to the gain transistor(s) and provide an output RF signal for one of the plurality of band groups. In an exemplary design, the gain transistor(s) include a plurality of gain transistors for the plurality of band groups. One gain transistor and one cascode transistor are enabled to amplify the input RF signal and provide the output RF signal for the selected band group. The gain transistors may be coupled to different taps of a single source degeneration inductor or to different source degeneration inductors.

主权项

1. An apparatus comprising:
at least one gain transistor configured to receive an input radio frequency (RF) signal and formed on an integrated circuit; and a plurality of cascode transistors each corresponding to a respective band group of a plurality of band groups coupled to the at least one gain transistor and each of the plurality of cascode transistors configured to provide an output RF signal for the respective band group of the plurality of band groups and formed on the integrated circuit, wherein each cascode transistor is coupled to a respective load circuit for the respective band group, wherein each of the load circuits are formed on the integrated circuit and comprise a transformer coupled to the respective cascode transistor, and wherein a secondary side of the transformer provides a separate output for the respective band group of the plurality of band groups.