Semiconductor device and method of manufacturing the same

摘要

A method of manufacturing a semiconductor device according to an aspect of the present invention comprises: depositing an insulation film on a silicon substrate; forming element isolation regions by processing the insulation film as well as exposing the surface of the silicon substrate in the region thereof acting as active element forming regions later; and forming the active element forming regions by epitaxially growing a silicon film on the exposed surface of the silicon substrate such that the thickness thereof is larger than the short side width in the perpendicular cross section thereof as well as smaller than the dimension of the element isolation regions in the depth direction thereof.