发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a Fabry-Perot type semiconductor laser element having a narrow oscillating-spectrum width. SOLUTION: The Fabry-Perot type semiconductor laser element 10 has an active layer 17, and a clad layer 13 having a refractive index lower than the one of the active layer. A light absorbing layer 14 is interposed between the active layer and the clad layer, and a separating layer 15 is interposed between the light absorbing layer and the active layer. The light absorbing layer has a fundamental-absorbing-edge wavelength shorter than the light-emitting peak-wavelength of the active layer, and has a band-gap energy smaller than that of the clad layer. The separating layer has a band-gap energy larger than those of the light absorbing layer and the active layer. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007208062(A) 申请公布日期 2007.08.16
申请号 JP20060026039 申请日期 2006.02.02
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KATO TAKASHI
分类号 H01S5/343 主分类号 H01S5/343
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