| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching solution which is improved in etching characteristics and used for single crystal silicon, and to provide a method of manufacturing a silicon deposition mask which is capable of stably mass-producing silicon deposition masks of high accuracy by using the above etching solution for single crystal silicon. SOLUTION: Etching adjusting ions are added to an etching solution formed of a potassium hydroxide aqueous solution to form a single crystal silicon etching solution. The above etching adjusting ions are metal ions, such as calcium ions, lead ions, and aluminum ions. COPYRIGHT: (C)2007,JPO&INPIT
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