发明名称 |
Gallium nitride-based semiconductor device |
摘要 |
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.
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申请公布号 |
US2007187693(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20050591585 |
申请日期 |
2005.03.03 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
KOBAYAKAWA MASATO;TOMOZAWA HIDEKI;MIKI HISAYUKI |
分类号 |
H01L29/15;H01L31/00;H01L33/02;H01L33/06;H01L33/16;H01L33/32;H01L33/36 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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