REMOVAL OF METAL RESIDUE IN INTEGRATED CIRCUIT MANUFACTURE

摘要

The invention provides a method for removing residue from a cavity during the formation of an interconnect structure of an integrated. The method for removing residue from a cavity during the formation of an interconnect structure, among other steps, may include subjecting residue (410) having an embedded metal therein located within a cavity (310) in a dielectric layer (240) and over at least a portion of a conductive feature (220) to a short duration oxidation process so as to oxidize a substantial portion of the embedded metal, and removing the residue containing the oxidized embedded metal using an etch process.