SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCING THE SAME
摘要
<p>A semiconductor light-emitting device comprising substrate (1); n-GaN layer (2) supported by the substrate (1); p-GaN layer (7) provided at a position with a spacing from the substrate (1) greater than that of the n-GaN layer (2); active layer (4) containing InGaN provided between the n-GaN layer (2) and the p-GaN layer (7); sublimation prevention layer (5) containing InGaN provided between the active layer (4) and the p-GaN layer (7); and In composition gradient layer (6) interposed between the sublimation prevention layer (5) and the p-GaN layer (7) wherein the In composition ratio is inclined in the thickness direction so as to be low as the distance to the p-GaN layer (7) is decreased.</p>
