| 摘要 |
<p>A shift register is provided to obtain high capacitance with a dual gate transistor, thereby enhancing a driving performance of a gate driving circuit. A shift register includes a first gate electrode pattern(110), a semiconductor layer, a source electrode line(140), a drain electrode line(130), and a second gate electrode pattern(160). The first gate electrode pattern is arranged on a non-display region on an insulation substrate. The semiconductor layer is arranged on the first gate electrode pattern. The source and the drain electrode lines are arranged in a cross-finger shape on the semiconductor layer. The second gate electrode pattern is arranged on the drain electrode line and the source electrode line and electrically connected to the first gate electrode pattern.</p> |
