| 摘要 |
<p>A method for manufacturing a magnetoresistance effect element is provided to achieve a highly sensitive magnetism detection by obtaining a large amount of variation of magnetoresistance, high reliability, and high magnetic stability. A magnetoresistance effect element includes a first electrode(1), a substrate layer(2), a semi-magnetic layer(3), a magnetization fixed layer(4), a spacer layer(5), a magnetization free layer(6), a first protective layer(7), a second protective layer(8), and a second electrode(9). The substrate layer includes a Ta layer with a thickness of 5nm and a Ru layer with a thickness of 2nm. The anti-ferromagnetic layer has a thickness of 15nm and is made of a PtMn material. The magnetization fixed layer includes a first magnetization fixed layer(4-1), a magnetization anti-parallel coupling layer(4-2), and a second magnetization fixed layer(4-3). The spacer layer is made of a Cu material and has a thickness of 3nm. The first magnetization fixed layer has a thickness between 3 and 4nm and is made of a Co90Fe10 material. The magnetization anti-parallel coupling layer has a thickness of 0.9nm and is made of the Ru material. The second magnetization fixed layer includes a functional layer(10-1) applied therein and is bonded with the Co90Fe10 layer with a thickness of 1.5nm.</p> |
