SEMICONDUCTOR MEMORY DEVICE USING PMOS BULK BIOS CONTROL SCHEME

摘要

A semiconductor memory device using a PMOS bulk bias control scheme is provided to prevent the decrease of operation speed by using a different driving time according to an operation mode of the semiconductor memory device. In a semiconductor memory device using a PMOS bulk bias control scheme, a plurality of logic circuits(300) is operated by an enable signal. A selection circuit(200) selects a different period of the enable signal according to an operation mode of the semiconductor memory device. The selection circuit changes the period of the enable signal by comprising a plurality of delay lines. The selection circuit uses an MRS(Mode Register Set) in selecting the period of the enable signal.