| 摘要 |
An apparatus for processing a substrate is provided to prevent an increase of a time interval for heating a substrate by uniformly heating the substrate. A substrate is received in a housing(110) during a fabricating process, having a space for performing a semiconductor process. The substrate is placed on a support member(120) installed in the lower part of the inside of the housing. A gas supply member(130) supplies process gas to the surface of the substrate placed on the support member during the process. The gas supply member is disposed on the outer part of the substrate placed on the support member. The gas supply member can have a ring shape, including injection holes for injecting process to the inside of the gas supply member.
|
