METHODS FOR FORMING SEMICONDUCTOR DEVICES HAVING SILICIDED GATE ELECTRODES

摘要

A semiconductor device having a silicide layer on a gate electrode is provided to improve a breakdown voltage by forming a silicide layer on a gate electrode of a memory cell wherein the silicide layer is not formed on a source/drain region. A non-volatile memory device(50) is formed on a substrate(10). A transistor(70) for a peripheral circuit is formed on the substrate. A silicide layer is formed on the control gate(54) of the non-volatile memory device and on the gate of the transistor. An interlayer dielectric whose upper surface is substantially flat is formed on the non-volatile memory device and the transistor, having an opening exposing the silicide layer. The upper surface of the control gate and the upper surface of the gate can be completely covered with the silicide layer.