METHOD OF MAUNFACTURING OHMIC CONTACT LAYER AND METHOD OF MAUNFACTURING METAL WIRE OF SEMCONDUCTOR DEVICE USING THE SAME

摘要

A method for forming an ohmic contact layer and a method for forming a metal line of a semiconductor device using the same are provided to improve productivity of metal line fabrication by acquiring a substantially uniform thickness from a metal silicide layer without additional processes using an electroless plating process. An insulating layer is formed on a substrate(120) with a conductive pattern. An insulating pattern(123) with an opening portion for exposing the conductive pattern to the outside is formed on the resultant structure by etching selectively the insulating layer. A thin film containing silicon is formed on the exposed conductive pattern alone. A transitional metal film is formed on the thin film by performing an electroless plating process on the resultant structure. A metal silicide layer(129) is formed on the thin film due to the silicidation between the transitional metal film and the silicon of the thin film.