SEMICONDUCTOR MEMORY DEVICE BEING CAPABLE OF SELECTING REFRESH PERIOD

摘要

A semiconductor memory device capable of selecting a refresh period is provided to reduce power consumed for performing a refresh operation at room temperature. In a semiconductor memory device, a refresh generation circuit(120) generates a plurality of refresh signals with different refresh periods by receiving an external refresh signal. A temperature control device(140) generates a refresh control signal in response to the temperature of the semiconductor memory device. A MUX(160) determines a refresh signal to be used in the semiconductor memory device among the refresh signals according to the refresh control signal.